Giới thiệu [1 CON] (KT1) IGBT RJP30E2 TO-3P 35A 360V Kênh N (30E2)
IGBT RJP30E2 TO-3P 35A 360V Kênh N (30E2)
Mô tả: Description RJP30E2 IGBT 360V 35A Silicon N Ch 360V IGBT High Speed Power Switching functions
Thông số: - Trench gate technology (G5H series) - Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ - High speed switching tf = 150 ns typ - Low leak current ICES= 1 μA max
Datasheets: https://alltransistors.com/adv/pdfview.php?doc=mgd622.pdf&dire=_1 .............................................................................. Điện tử Minh Nguyên CHIPN24 - 565/19 Bình Thới, P.10, Q.11, TP.HCM - Website: https://chipn24.com - Bán hàng: 028.6264.1482 - 0965.605.840 - 0868.532.813 - 0868.532.813